Device Electronics
Fall 2015
Required for Electrical Engineering Option
Catalog Data: 

ECE352 -- Device Electronics (3 units)

Description: Electronic properties of semiconductors; carrier transport phenomena; P-N junctions; bipolar, unipolar, microwave and photonic devices.

Grading:  Regular grades are awarded for this course: A B C D E

ECE 351C

Streetman, B.G. and S.K. Banerjee. Solid State Electronic Devices. 7th ed. Pearson. 2014.
Suggested but not required: Casey, J. Craig. Devices for Integrated Circuits. John Wiley & Sons. 1999.

Course Learning Outcomes: 

By the end of this course, the student should be able to:

  1. Understand basic cubic crystal structure and origin of semiconductor characteristics: conduction band, valence band, energy gap, dopant atoms, host atoms, intrinsic and extrinsic materials, fixed charges and mobile carriers.
  2. Understand density of states and Fermi-Dirac distribution functions, effective mass, semiconductor band gap and carrier statistics, kinetic and potential carrier energies.
  3. Calculate properties of intrinsic and extrinsic semiconductor materials, e.g., Fermi levels and carrier concentrations.
  4. Apply principles of carrier drift to determine field dependent transport, conductivity, resistivity, resistance, and sheet resistance.
  5. Apply principles of carrier diffusion to determine carrier gradient dependent transport and derive the Einstein relation.
  6. Understand band diagrams and determine carrier potential and kinetic energies.
  7. Utilize defect densities and carrier recombination processes to calculate generation and recombination rates in semiconductor devices and materials.
  8. Apply continuity equation to solve dynamics of carrier transport and recombination in semiconductor devices and materials.
  9. Calculate carrier densities, quasi Fermi levels, and currents in biased metal-semiconductor and  PN junctions.
  10. Determine device/material parameters given an experimental energy diagram characteristic for MS, p-n junction and MOS capacitor structures.
  11. Extract MOS transistor parameters from device process variables such as substrate doping and channel length.
  12. Understand device capacitance functions.
  13. Identify deviations in ideal and real device characteristics.
Course Topics: 

Chapter 1: Semiconductor device fabrication.

Chapter 2: The hydrogen atom, Schroedinger Equation, multi-electron atoms, crystal structure, thermal equilibrium, energy bands in solids, electrons and holes, effective mass, density of electron states, intrinsic semiconductors, kinetic and potential carrier energy, intrinsic and extrinsic semiconductors and carrier concentrations.

Chapter 3: Carrier drift, mobility, resistivity, IC resistors, carrier diffusion, diffusivity, Einstein relation, excess carrier concentrations, generation/recombination processes, carrier injection, continuity equation and applications to semiconductor problems.

Chapter 4: Equilibrium and non-equilibrium PN junction band diagrams, PN junction analysis, I-V characteristics, forward and reverse bias operation of the diode, Carrier distributions in the diode under different bias. Ideal and non-ideal device behavior, including: space charge recombination and generation currents, high current effects, temperature effects.

Chapter 5: Reverse bias breakdown mechanisms and characteristics, junction capacitance and diffusion capacitance.

Chapter 6: Metal semiconductor devices, Shottky barriers and ohmic contacts, electrostatic analysis, barrier height, band diagrams, carrier concentration, steady state analysis, I~V characteristics.

Chapter 7: MOS Capacitor thermal equilibrium band diagram, ideal and non-ideal flatband voltage, the effects of gate bias on regions of operation and the band diagrams, surface potential, threshold voltage, non-ideal oxides, energy band characteristics for ideal and non-ideal MOS capacitors.

Chapter 8: MOS Field Effect Transistors, types, I-V characteristics, properties of regions of device operation.

Chapter 9 (May not cover): Bipolar junction devices, band diagrams, I-V characteristics, deviations of real device behavior from ideal behavior, modes of operation, carrier distributions.

Class/Laboratory Schedule: 

Three, 50-minute lectures per week

Relationship to Student Outcomes: 

ECE 352 contributes directly to the following specific Electrical and Computer Engineering Student Outcomes of the ECE department:

  • an ability to apply knowledge of mathematics, science and engineering (High)
  • an ability to design and conduct experiments, as well as to analyze and interpret data (Low)
  • an ability to design a system, component, or process to meet desired needs within realistic constraints such as economic, environmental, social, political, ethical, health and safety, manufacturability and sustainability (Medium)
  • an ability to identify, formulate and solve engineering problems (High)
  • an understanding of professional and ethical responsibility (Medium)
  • an ability to communicate effectively (Medium)
  • an ability to use the techniques, skills, and modern engineering tools necessary for engineering practice. (High)
Prepared by: 
Dr. Kelly Potter
Prepared Date: 

University of Arizona College of Engineering