ECE Administrative OfficeMonday-Friday8 a.m. to 5 p.m.ECE Building, Room 256520.621.6193520.621.8076 FAXhead@ece.arizona.eduUniversity of Arizona1230 E. Speedway Blvd.P.O. Box 210104Tucson, AZ 85721-0104Undergraduate AdvisorMarisa Pope-MalingsOffice: ECE 201Phone: 520.621.6171EmailGraduate AdvisorTami WhelanOffice: ECE 261Phone: 520.621.6195Email
University Program Cadence Member
ECE Industrial Advisory Board
Contamination Control in IC Processing and Effects of Process Induced Contamination on Device Performance. High K gate dielectrics with EOT < 0.5nm for Compound SC devices.
Semiconductor Devices (Physics and Device Operation), Solid State Physics, Integrated Circuit Processing Fabrication.
Advanced CMOS Process Technology, Vol. 19, VLSI Microstructure Science Series, By J.M. Pimbley, M. Ghezzo, H.G. Parks, and D.M. Brown. Norman G. Einspruch, Editor. (Academic Press Inc, 1989.)
University of Arizona College of Engineering