ECE 352 -
DEVICE ELECTRONICS
Fall Semester
2005
T., Th. 9:30 – 10:45
AM, ECE 107
Catalog
Data: Device Electronics: Electronic properties of semiconductors;
carrier transport phenomena; p-n and metal-semiconductor (MS) junctions; field effect,
and photonic devices.
Textbook: Devices for Integrated Circuits, by Craig Casey, Jr., John Wiley & Sons, 1999.
Reference Texts: 1.
Devices for Integrated Circuits, R. S. Muller, T. I. Kamins,
and M. Chan, John Wiley and Sons, 2003.
2.
Semiconductor Device Fundamentals, R. F. Pierret,
Addison-Wesley Publ., 1996.
Instructor:
Office Location:
ECE 524C
Office Hours:
1:00 PM– 2:00 PM, T., Th.
Email: palusinski@ece.arizona.edu
Prerequisites by
Topic:
1.
Knowledge
of mathematics to a level including linear differential equations.
2.
Understanding
of passive circuits and simple analysis methods.
3.
Knowledge
of the basic ideas of physics, particularly concepts like field, energy,
momentum, and waves.
4.
Successful
completion of ECE 351A.
Overall Educational
Goals:
The goal is to give
students an introduction to solid-state device physics in order that they may understand
the fundamental mechanisms underlying the operation of common semiconductor
devices such as, p-n junction diodes, metal/semiconductor (MS)
structures, metal/oxide/semiconductor (MOS) field effect transistors (FET),
bipolar junction transistors. Students who attain satisfactory or higher
comprehension of the material will understand the basics of crystal structure,
carrier statistics, transport and recombination phenomena, and operation of
devices.
Specific Educational
Outcomes:
Students should be
able to:
1. relate density of states and Fermi-Dirac distribution functions to semiconductor band gap and carrier statistics.
2. calculate properties of intrinsic and extrinsic semiconductor materials, e.g., Fermi levels, carrier concentrations.
3. apply principles of carrier drift to determine field dependent transport, conductivity, resistivity, resistance, and sheet resistance.
4. apply principles of carrier diffusion to determine transport dependent on carrier gradient.
5. utilize defect densities and carrier recombination processes to calculate generation and recombination rates in semiconductor devices materials.
6. apply continuity equation to formulate dynamics of carrier transport and recombination in semiconductor devices and materials.
7. apply Poisson’s equation and workfunctions to derive and determine the biased and unbiased p-n and MS junction potentials, depletion approximation, and depletion region widths.
8. calculate carrier densities, quasi Fermi levels, and currents in biased metal-semiconductor and p-n junctions .
9. determine device/material parameters given an experimental capacitance-voltage (C-V) characteristic for MS, p-n junctions and MOS capacitor structures.
10. apply Poisson’s equation and workfunctions to calculate channel properties and ideal and non-ideal flatband and threshold voltages for MOS devices.
11. calculate dc MOSFET characteristics for simple prototype structures, using constant bulk charge models.
Class requirements:
1. Two 75-minute lectures per week
2. Homework assignments
3. Three 75-minute mid-term examinations (Tentative dates: Sept. 6, Oct. 11, Nov. 15)
4. Comprehensive, 2-hour final examination (Thursday., Dec. 15, 8 – 10 AM, ECE 107)
5. Need of a good scientific calculator (e.g., HP48G)
Computer Usage: None required.
Laboratory Projects: None
Grading:
Grading will be based on homework assignments (15%);
three in-class exams (45%); and a final examination (40%). The final grades will be assigned as follows:
87.5% – 100% Excellent (
A)
75% – 87.4% Above
average ( B )
62.5% – 74.9% Average (
C )
50% – 62.4% Below
average ( D )
below 50% Failure ( E )